Plasma etch system

Details Plasma etch system Plasma etch system

1999-10-05

2000-09-19

Utech, Benjamin L.

Coating apparatus

Gas or vapor deposition

Work support

361234, 279128, 156345, C23C 1600

Patent

active

061206105

ABSTRACT:
This invention relates to a plasma reactor apparatus having improved etch uniformity and throughput. Higher etch uniformity is achieved through the use of a new gas delivery mechanism and a thermally insulated wafer chuck. The vacuum insulated chuck also results in lower energy consumption and higher throughput.

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Yasuda, T. and Lucovsky, G., Dual-function remote plasma etching/cleaning system applied to selective etching of SiO.sub.2 and removal of polymeric residues, J.Vac.Sci.Technol.A 11(5), Sep./Oct. 1993, .COPYRGT.1993 American Vacuum Society, pp. 2496-2507.

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