Plasma etch system

Details Plasma etch system Plasma etch system

1997-05-02

1999-09-28

Breneman, Bruce

Coating apparatus

Gas or vapor deposition

With treating means

156345, 118728, C23C 1600

Patent

active

059581395

ABSTRACT:
This invention relates to a plasma reactor apparatus having improved etch uniformity and throughput. Higher etch uniformity is achieved through the use of a new gas delivery mechanism and a thermally insulated wafer chuck. The vacuum insulated chuck also results in lower energy consumption and higher throughput.

REFERENCES:
patent: 4457359 (1984-07-01), Holden
patent: 4508161 (1985-04-01), Holden
patent: 4512391 (1985-04-01), Harra
patent: 4535834 (1985-08-01), Turner
patent: 4542298 (1985-09-01), Holden
patent: 4612077 (1986-09-01), Tracy et al.
patent: 4680061 (1987-07-01), Lamont, Jr.
patent: 4743570 (1988-05-01), Lamont, Jr.
patent: 4780169 (1988-10-01), Stark et al.
patent: 4790258 (1988-12-01), Drage et al.
patent: 4909314 (1990-03-01), Lamont, Jr.
patent: 5127988 (1992-07-01), Kawamura et al.
patent: 5192849 (1993-03-01), Moslehi
patent: 5211796 (1993-05-01), Hansen
patent: 5221427 (1993-06-01), Koinuma et al.
patent: 5344525 (1994-09-01), Cathey, Jr.
patent: 5372674 (1994-12-01), Steinberg
patent: 5447570 (1995-09-01), Schmitz et al.
patent: 5466325 (1995-11-01), Mizuno et al.
patent: 5516367 (1996-05-01), Lei et al.
patent: 5556476 (1996-09-01), Lei et al.

Affiliated with

Also associated with

Rating

Plasma etch system does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma etch system, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma etch system will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-698452