Plasma etch reactor and method

Details Plasma etch reactor and method Plasma etch reactor and method

2007-05-29

2007-05-29

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S710000, C438S714000, C156S345300

Reexamination Certificate

active

11087540

ABSTRACT:
A plasma etch reactor20includes a upper electrode24, a lower electrode24, a peripheral ring electrode26disposed therebetween. The upper electrode24is grounded, the peripheral electrode26is powered by a high frequency AC power supply, while the lower electrode28is powered by a low frequency AC power supply, as well as a DC power supply. The reactor chamber22is configured with a solid source50of gaseous species and a protruding baffle40. A nozzle36provides a jet stream of process gases in order to ensure uniformity of the process gases at the surface of a semiconductor wafer48. The configuration of the plasma etch reactor20enhances the range of densities for the plasma in the reactor20, which range can be selected by adjusting more of the power supplies30, 32.

REFERENCES:
patent: 5453305 (1995-09-01), Lee
patent: 5707486 (1998-01-01), Collins
patent: 6048798 (2000-04-01), Gadgil et al.
patent: 6620335 (2003-09-01), DeOrnellas et al.

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