Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-06-14
2005-06-14
Vinh, Lan (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S710000, C438S712000, C156S345390
Reexamination Certificate
active
06905969
ABSTRACT:
A plasma etch reactor20includes a upper electrode24, a lower electrode24, a peripheral ring electrode26disposed therebetween. The upper electrode24is grounded, the peripheral electrode26is powered by a high frequency AC power supply, while the lower electrode28is powered by a low frequency AC power supply, as well as a DC power supply. The reactor chamber22is configured with a solid source50of gaseous species and a protruding baffle40. A nozzle36provides a jet stream of process gases in order to ensure uniformity of the process gases at the surface of a semiconductor wafer48. The configuration of the plasma etch reactor20enhances the range of densities for the plasma in the reactor20, which range can be selected by adjusting more of the power supplies30, 32.
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Cofer Alferd
DeOrnellas Stephen P.
Jerde Leslie G.
Olson Kurt A.
Vail Robert C.
Fliesler & Meyer LLP
Tegal Corporation
Vinh Lan
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