Plasma etch process for defining catalyst pads on...

Details Plasma etch process for defining catalyst pads on... Plasma etch process for defining catalyst pads on...

2005-10-31

2008-08-19

Smith, Matthew S. (Department: 2823)

Semiconductor device manufacturing: process

Having organic semiconductive component

C977S742000, C257SE51040

Reexamination Certificate

active

07413924

ABSTRACT:
A process for forming a catalyst layer for carbon nanotube growth comprising forming a catalyst layer having a first and second portion over one of a cathode metal layer or a ballast resistor layer; patterning a photoresist over the first portion; etching the second portion with a chlorine/argon plasma; removing the photoresist with an ash process; and removing the veils and preparing the surface for carbon nanotube growth with a semi-aqueous hydroxylamine solution.

REFERENCES:
patent: 5849639 (1998-12-01), Molloy et al.
patent: 5882489 (1999-03-01), Bersin et al.
patent: 6000980 (1999-12-01), Baldi et al.
patent: 6739932 (2004-05-01), Yaniv et al.
patent: 6812480 (2004-11-01), Lee et al.
patent: 7052588 (2006-05-01), Gu et al.
patent: 7071113 (2006-07-01), Kim et al.
patent: 2003/0059968 (2003-03-01), Cheng et al.
patent: 2004/0227447 (2004-11-01), Yaniv et al.
patent: 2005/0112983 (2005-05-01), Park
patent: 2005/0168133 (2005-08-01), Toyota et al.

Affiliated with

Also associated with

Rating

Plasma etch process for defining catalyst pads on... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma etch process for defining catalyst pads on..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma etch process for defining catalyst pads on... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3999755