Plasma etch movable substrate

Details Plasma etch movable substrate Plasma etch movable substrate

1984-10-22

1987-04-28

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

156657, 20419232, H01L 21306, B44C 122, C03C 1500, C23F 102

Patent

active

046611967

ABSTRACT:
A substrate that is a portion of an electrode of a plasma reactor has two positions, a low position and a process position. They are achieved without generating particulate contaminate and are achieved additionally while the reaction chamber is maintained at its process pressure.
Stainless steel bellows assemblies have an inter volume that are capped at both ends from a chamber between the bellows. One end of the bellows assembly is mounted to the process chamber in a fixed position and a substrate to the other end is attached and is movable. A positioning is achieved by introducing compressed air in the chamber between the bellows and overcoming the process pressure in the outer chamber. A second position is achieved by releasing the compressed air between the chamber between the bellows and allowing the process pressure in the process chamber to collapse the bellows assembly.

REFERENCES:
patent: 3757733 (1973-09-01), Reinberg
patent: 4313783 (1982-02-01), Davies et al.
patent: 4318767 (1982-03-01), Hijikata et al.
patent: 4341582 (1982-07-01), Kohman et al.
patent: 4422896 (1983-12-01), Class et al.
patent: 4526670 (1985-07-01), Hajj

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