Plasma etch method for TiO.sub.2

Details Plasma etch method for TiO.sub.2 Plasma etch method for TiO.sub.2

1984-11-13

1986-03-04

Paschall, M. H.

Electric heating

Metal heating

By arc

219121PF, 204192EC, 156643, 156646, B23K 900, G02B 514

Patent

active

045741778

ABSTRACT:
A method for plasma etching of TiO.sub.2, using a mixture of oxygen and a fluorine-bearing species, preferably CF.sub.4. This mixture gives good selectivity over aluminum and photoresist, and approximately unity selectivity over silica or silicon nitride. Use of a chlorine-containing species is also taught by the invention, and will provide different selectivities. The present invention is also useful for etching in the RIE mode.

REFERENCES:
patent: 4288283 (1981-09-01), Umezaki et al.
patent: 4313648 (1982-02-01), Yano et al.
patent: 4350729 (1982-09-01), Nakano et al.
patent: 4367119 (1983-01-01), Logan et al.
patent: 4402126 (1983-09-01), Chapman

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