Plasma etch cleaning in low pressure chemical vapor deposition s

Details Plasma etch cleaning in low pressure chemical vapor deposition s Plasma etch cleaning in low pressure chemical vapor deposition s

1983-06-30

1986-03-18

Metz, Andrew H.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

134 1, 118715, 156643, 204298, C23C 1400

Patent

active

045766983

ABSTRACT:
A system for in situ plasma etch removal of deposition products that accumulate during device processing. An r.f. electrode is configured to removably fit coaxially within the chamber, a quartz tube. A chamber heater shield functions also as an r.f. return. Cleaning gas is introduced into the chamber and r.f. power supplied to the electrodes to initiate an r.f. plasma which etch cleans formations on the quartz tube walls. The deposition equipment is cleaned without the need for disassembly.

REFERENCES:
patent: 4123316 (1978-10-01), Tsuchimoto
patent: 4123663 (1978-10-01), Horiike
patent: 4138306 (1979-02-01), Niwa
patent: 4225222 (1980-09-01), Kempter
patent: 4265730 (1981-05-01), Hirose et al.
patent: 4461237 (1984-07-01), Hinkel et al.
patent: 4500563 (1985-02-01), Ellenberger

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