Plasma enhanced chemical vapor processing of semiconductor subst

Details Plasma enhanced chemical vapor processing of semiconductor subst Plasma enhanced chemical vapor processing of semiconductor subst

1991-05-20

1993-07-06

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

118620, 118715, 118723, 427124, H01L 21302, B05D 512, B05B 5025, C23C 1600

Patent

active

052253759

ABSTRACT:
For plasma enhanced chemical vapor processing of semiconductor substrates, substrates are mounted on an elongate support, in a spaced parallel array. A shaft is rotatably mounted on the support and has electrode holding means, the electrodes alternating in polarity. The shaft, when rotated, moves the electrodes down in between the substrates, for positioning of the assembly in a reaction chamber for processing. After processing, and removal from the chamber, the shaft is rotated to move the electrodes out from between the substrates, to permit easy loading and unloading. The substrates are normally supported on boats positioned on the support. A particularly effective rf power feedthrough connects rf power from a power source through the door of the chamber.

REFERENCES:
patent: 4751895 (1988-06-01), Yates
patent: 5050534 (1991-09-01), Yates

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