Fishing – trapping – and vermin destroying
Patent
1995-03-10
1997-03-11
Fourson, George
Fishing, trapping, and vermin destroying
4272551, 4271261, 437192, 437190, H01L 21465, H01L 21441
Patent
active
056101066
ABSTRACT:
A method of forming a titanium nitride film onto a semi-conductor substrate includes forming a plasma of a reactant gas mixture. The reactant gas mixture includes titanium tetrachloride, ammonia and nitrogen. The ratio of nitrogen to ammonia is established at about 10:1 to about 10,000:1 and the partial pressure of titanium tetrachloride is established to ensure formation of titanium nitride. The plasma is contacted to a substrate heated to a temperature of 400.degree. C. to about 500.degree. C. This provides a high purity titanium nitride film with excellent conformality at temperatures which will not interfere with integrated circuits having previously-deposited aluminum members.
REFERENCES:
patent: 4792378 (1988-12-01), Rose et al.
patent: 4798165 (1989-01-01), deBoer et al.
patent: 4897709 (1990-01-01), Yokoyama et al.
patent: 5052339 (1991-10-01), Vakerlis et al.
patent: 5192370 (1993-03-01), Oda et al.
patent: 5246881 (1993-09-01), Sandhu et al.
patent: 5268034 (1993-12-01), Vukelic
patent: 5296404 (1994-03-01), Akahori et al.
patent: 5342652 (1994-08-01), Foster et al.
patent: 5356476 (1994-10-01), Foster et al.
patent: 5370739 (1994-12-01), Foster et al.
patent: 5378501 (1995-01-01), Foster et al.
patent: 5416045 (1995-05-01), Kauffman et al.
patent: 5433787 (1995-07-01), Suzuki et al.
patent: 5434110 (1995-07-01), Foster et al.
patent: 5443647 (1995-08-01), Aucoin et al.
M. R. Hilton et al. "Composition, Morphology, and Mechanical Properties of Plasma-Assisted CVD TiN Films on M2 Tool Steel", Thin Solid Films vol. 139 (1986) pp. 247-260.
Arora Rikhit
Foster Robert F.
Hillman Joseph T.
Everhart C.
Fourson George
Materials Research Corporation
Sony Corporation
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