Plasma enhanced chemical vapor deposition of titanium nitride us

Fishing – trapping – and vermin destroying

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4272551, 4271261, 437192, 437190, H01L 21465, H01L 21441

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056101066

ABSTRACT:
A method of forming a titanium nitride film onto a semi-conductor substrate includes forming a plasma of a reactant gas mixture. The reactant gas mixture includes titanium tetrachloride, ammonia and nitrogen. The ratio of nitrogen to ammonia is established at about 10:1 to about 10,000:1 and the partial pressure of titanium tetrachloride is established to ensure formation of titanium nitride. The plasma is contacted to a substrate heated to a temperature of 400.degree. C. to about 500.degree. C. This provides a high purity titanium nitride film with excellent conformality at temperatures which will not interfere with integrated circuits having previously-deposited aluminum members.

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