Plasma enhanced chemical vapor deposition of thin films of silic

Details Plasma enhanced chemical vapor deposition of thin films of silic Plasma enhanced chemical vapor deposition of thin films of silic

1987-10-16

1989-09-05

Silverman, Stanley

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 38, 427 51, 427 93, 427 94, 428448, 428450, 437225, B32B 904, B05D 506

Patent

active

048637556

ABSTRACT:
This invention relates to a process for the production of a solid thin film containing silicon and nitrogen on a substrate, said film having an aggregate low concentration of inorganic carbon and oxygen of less than about 51 atom percent, which process comprises:

REFERENCES:
patent: 3853567 (1974-12-01), Verbeek
patent: 3892583 (1975-07-01), Winter
patent: 4158717 (1979-06-01), Nelson
patent: 4330569 (1982-05-01), Gulett
patent: 4451969 (1984-06-01), Chaudhuri
patent: 4692344 (1987-09-01), Kaganowicz et al.
patent: 4708884 (1987-11-01), Chandross et al.
K. Katoh et al., "Plasma-Enhanced Deposition of Silicon Nitride from SiH.sub.4 -N.sub.2 Mixture," Japanese of Journal Applied Physics, vol. 22, #5, pp. L321-L323, (1983).
M. Gazicki et al., "Electrical Properties of Plasma Polymerized Thin Organic Films," Plasma Chemical and Plasma Processing, vol. 3, #3, pp. 279-327, Plenum Publishing, N.Y., (1983).
Cl Beatty, "Silicon Nitride and Silicon Carbide from Organometallic and Vapor Precursors," Ultrastructure Processing of Ceramics, Glasses. and Composites, Ch23, John Wiley and Sons, N.Y. (1983).
B. Arkles, "Silicon Nitride from Organosiliazane Cyclic and Linear Prepolymers," Journal of the Electrochemical Society, Brief Communications, pp. 233-234, Jan. 1986.
D. V. Tsu et al., "Local Atomic Structure inThin Films of Silicon Nitride and Silicon Diimide Produced by Remote Plasma-Enhanced Chemical Vapor Deposition," Physical Review B, vol. 33(10), pp. 7069-7076, (1986).
V. I. Belyi, "Plasmachemical Methods for Obtaining Silicon and Boron Nitrides on Indium Antimonide," Soviet Microelectronics, vol. 15(2), pp. 91-94, Plenum Publishing, N.Y., (1986).
N. Voke et al., "Optical and Electrical Properties of Hydrogenated Amorphous Silicon Nitride Films Deposited in Various PECVD Systems," Plasma Processing, vol. 68, pp. 175-181, Materials Research Society, Pittsburgh, (1986).
"Abstracts," (1-15 and 251-264), Japanese Electrochemical Society, vol. 134, #3, pp. 107C and 125C, Abstract #253, Mar. 1987.
Brooks and Hess, "Plasma-Deposited Silicon Nitride Films from Organosilicon Monomers," Extended Abstracts, vol. 87-1, Abstract #253, p. 365, Electrochemical Society, May 10, 1987.
J. J. Nicki et al., "Chemical Vapor Deposition in the Systems Silicon-Carbon and Silicon Carbon Nitrogen," Journal of the Less Common Metals, vol. 37, pp. 317-329, Netherlands, (1974).
A. M. Wrobel et al., "Mechanism of Polysilazane Thin Film Formation During Glow Discharge Polymerization of Hexamethylcyclotrisilazane," Polymer, vol. 17, pp. 673-677, Poland, (1976).
A. M. Wrobel et al., "Structure of Glow Discharge Polysilazane Thin Films," Polymer, vol. 17, pp. 678-684, Poland, (1976).
M. Gazicki et al., "Studies on Soluble Fraction of Glow Discharge Polysilazane Formed from Hexamethylcyclotrisilazane", Journal of Applied Polymer Science, vol. 21, pp. 2013-2019, Wiley & Sons, N.Y., (1977).
K. S. Mazdiyasni et al., "Characterization of Organosilicon-Infiltrated Porous Reaction-Sintered Si.sub.3 N.sub.4," Journal of American Ceramic Society, vol. 61, #11-12, pp. 504-508, Dec. 78.
A. M. Wrobel et al., "Effect of Glow Discharge Conditions on Structure and Therman Properties of Polysilazane Thin Films," J. Macromol Sci. Chem., A12(7), pp. 1041-1045, Poland, (1978).
J. Tyczkowski et al., Thin Solid Films, 55, pp. 253-259, Netherlands, (1978).
M. Kryszewski et al., "Plasma-Polymerized Organosilicon Thin Films-Structure and Properties," Plasma Polymerization, p. 219-

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