Plasma enhanced chemical vapor deposited vertical silicon nitrid

Details Plasma enhanced chemical vapor deposited vertical silicon nitrid Plasma enhanced chemical vapor deposited vertical silicon nitrid

1987-12-29

1988-11-22

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG114, 148DIG136, 357 51, 437 60, 437193, 437200, 437241, 437918, H01C 710, H01L 2904

Patent

active

047866128

ABSTRACT:
An improved resistor for use in MOS integrated circuits. An opening is formed in an insulative layer which separates two conductive regions. A plasma enhanced chemical vapor deposition of passivation material such as silicon-rich silicon nitride is deposited in the window, contacting both conductive regions and providing resistance in a vertical direction between these regions.

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