Semiconductor device manufacturing: process – Making passive device – Resistor
Patent
1999-03-11
2000-10-03
Booth, Richard
Semiconductor device manufacturing: process
Making passive device
Resistor
438763, 438689, 438693, H01L 2120
Patent
active
061272388
ABSTRACT:
A method for forming a dielectric layer within a microelectronics fabrication. There is first provided a substrate. There is then formed over the substrate a polysilicon resistor. There is then formed over the polysilicon resistor a first dielectric layer formed of a silicon nitride dielectric material deposited employing a plasma enhanced chemical vapor deposition (PECVD) method other than a high density plasma chemical vapor deposition (HDP-CVD) method. Finally, there is then formed over the first dielectric layer a second dielectric layer deposited employing a high density plasma chemical vapor deposition (HDP-CVD) method, where first dielectric layer attenuates a decrease in resistance of the polysilicon resistor incident to forming the second dielectric layer over the first dielectric layer.
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Chok Kho Liep
Liao Marvin De-Dui
Lin Yih-Shung
Lu Wei
Zheng Jia Zhen
Booth Richard
Chartered Semiconductor Manufacturing Ltd.
Pike Rosemary L. S.
Saile George O.
Stevenson André C.
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