Plasma doping method

Details Plasma doping method Plasma doping method

1988-05-26

1990-03-27

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437173, 437929, H01L 2122, H01L 21268

Patent

active

049120654

ABSTRACT:
Disclosed is a plasma doping method capable of introducing a large quantity of impurities into a substrate at a relatively low temperature (200.degree. to 600.degree. C.). In the LSI fabrication process represented by Si process, it is necessary to introduce impurities at a properly controlled concentration into desired positions. In this plasma doping method, in order to satisfy this application, the doping temperature may be controlled around 100.degree. C. at high degree of vacuum and by ECR discharge or the like, and a process capable of using a resist mask generally used in the LSI fabrication step and controlling the concentration in a wide range is enabled, so that an extremely shallow impurity profile is realized.

REFERENCES:
patent: 3880675 (1975-04-01), Tarui et al.
patent: 4382099 (1983-05-01), Legge et al.
patent: 4434036 (1984-02-01), Hoerschelmann et al.
patent: 4465529 (1984-08-01), Arima et al.
patent: 4668365 (1987-05-01), Foster et al.
patent: 4698104 (1987-10-01), Barker et al.
patent: 4737379 (1988-04-01), Hudgens et al.

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