Plasma deposition tool operating method

Details Plasma deposition tool operating method Plasma deposition tool operating method

1999-10-15

2001-09-18

Utech, Benjamin L. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S905000, C216S060000, C156S345420, C134S001100

Reexamination Certificate

active

06291358

ABSTRACT:

TECHNICAL FIELD
This invention relates to methods of operating plasma deposition tools.
BACKGROUND OF THE INVENTION
Plasma enhanced chemical vapor deposition tools include a reaction chamber having a susceptor upon which one or more semiconductor substrate(s) lie during a plasma deposition of material over the substrate(s). Unfortunately, not all of the depositing material forms on the wafer. Some of it, as well as reaction byproducts, deposits on internal surfaces of the reaction chamber. This includes the sidewalls and other components therein, such as gas injectors and heaters. Further, depending on the chemistry utilized, some of the undesired deposited material on the reactor components can be dislodged in subsequent depositions and end up as contaminants deposited on the substrates.
One particular process where such is problematic involves the plasma enhanced chemical vapor deposition of thin titanium films utilizing TiCl
4
and H
2
as reactive precursors. Reaction byproducts from the deposition get deposited on internal chamber sidewalls and other components. These byproducts can be dislodged in subsequent depositions, and deposit on the substrates which can result in incredible yield loss of dies on the substrates being processed.
The present accepted technique to largely prevent this from occurring utilizes a Cl
2
plasma clean of the internal reactor components between each separate plasma depositing step. Many plasma reactor susceptors are, however, made of a material which is corrosive to attack by a chlorine containing plasma, particularly at elevated temperatures. Aluminum nitride is one example such susceptor material. Accordingly, during the chlorine plasma cleans, the susceptor is covered with a suitable and ultimately discardable protector typically in the shape of a conventional wafer which the tool is designed to process. Accordingly at the conclusion of a plasma deposition, the processed substrate is removed from the chamber, and a dummy protectable plate placed over the susceptor. Plasma cleaning with the chlorine gas then occurs, followed by removal of the dummy protector and placement of another semiconductor substrate upon the susceptor for processing. This, of course, significantly adversely affects throughput because of all the separate cleanings and required robotic placement of dummy plates over the susceptor during the plasma cleanings. Conducting such plasma cleanings every second, third or more depositings has been attempted, but with less than satisfactory results. Considerable yield loss occurs, and/or process uniformity from wafer to wafer between cleanings is significantly adversely affected.
Accordingly, it would be desirable to develop improved processes which better contend with material which deposits on internal chamber surfaces during plasma depositions on semiconductor substrates.
SUMMARY
The invention comprises methods of operating a plasma deposition tool. In but one implementation, material is separately plasma deposited over a plurality of semiconductor substrates within a chamber of a plasma deposition tool. The substrates are received over a susceptor within the chamber during the respective depositings. Intermediate at least some of the plasma depositings, a reactive chamber treating gas is provided within the chamber in a nonplasma environment and with at least a majority of the susceptor being outwardly exposed. Further, intermediate at least some of the plasma depositings, internal chamber surfaces are at least partially cleaned in a plasma environment using a cleaning gas and with at least a majority of the susceptor being covered.
In one implementation, a plasma deposition tool operating method sequentially includes first plasma depositing a material over a first semiconductor substrate received over a susceptor within a chamber of a plasma deposition tool. The first depositing results in a residue forming over at least some internal chamber surfaces. The first substrate is then removed from the chamber. With at least a majority of the susceptor outwardly exposed, a cleaning gas is injected into the chamber under nonplasma conditions to etch at least some residue from the internal chamber surfaces. A second semiconductor substrate is then positioned within the chamber over the susceptor and second plasma depositing of a material thereover is conducted. The second plasma depositing results in a residue forming over at least some internal chamber surfaces. The second substrate is then removed from the chamber. At least a majority of the susceptor is covered and at least some residue is plasma cleaned from the internal chamber surfaces.


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Product Bulletin, TCP ™ 9100 High-Density Oxide Etch System Productivity Solution for Advanced Oxide Etch, LAM Research Corporation, Fremont, CA (1998 or before) 4 pages.

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