Plasma deposition of silicon

Details Plasma deposition of silicon Plasma deposition of silicon

1981-11-12

1983-08-30

Hoffman, James R.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 39, B05D 512

Patent

active

044016875

ABSTRACT:
Method for plasma deposition of silicon from a silicon source gas. By inclusion of a halogen species in the gas flow stream, thermally induced deposition is inhibited so that plasma decomposition predominates. The silicon gas source may comprise the halogen species, which may alternatively be under separate control. The suppression of thermally induced deposition leads to improved thickness uniformity across the workpieces for significantly increased lifetime or runtime without the conductive plates shorting together.

REFERENCES:
patent: 4223048 (1980-09-01), Engle
patent: 4292343 (1981-09-01), Plaettner et al.

Affiliated with

Also associated with

Rating

Plasma deposition of silicon does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma deposition of silicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma deposition of silicon will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-905828