Plasma deposition apparatus and method for making...

Details Plasma deposition apparatus and method for making... Plasma deposition apparatus and method for making...

2007-03-06

2010-10-19

Toledo, Fernando L (Department: 2895)

Semiconductor device manufacturing: process

Chemical etching

C422S186000

Reexamination Certificate

active

07816269

ABSTRACT:
A plasma deposition apparatus for making polycrystalline silicon including a chamber for depositing said polycrystalline silicon, the chamber having an exhaust system for recovering un-deposited gases; a support located within the deposition chamber for holding a target substrate having a deposition surface, the deposition surface defining a deposition zone; at least one induction coupled plasma torch located within the deposition chamber and spaced apart from the support, the at least one induction coupled plasma torch producing a plasma flame that is substantially perpendicular to the deposition surface, the plasma flame defining a reaction zone for reacting at least one precursor gas source to produce the polycrystalline silicon for depositing a layer of the polycrystalline silicon the deposition surface.

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“Ultrafast deposition of microcrystalline Si by thermal plasma chemical vapor deposition”, Journal of Applied Physics, vol. 89, No. 12, Jun. 15, 2001.

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