Plasma deposition apparatus

Details Plasma deposition apparatus Plasma deposition apparatus

1981-04-27

1983-08-30

Smith, John D.

Coating apparatus

Gas or vapor deposition

With treating means

118 501, 118724, 427 451, 427 47, 204164, 42218601, 42218629, C23C 1308

Patent

active

044010540

ABSTRACT:
A plasma deposition apparatus having a plasma formation chamber and a specimen chamber which are arranged separately. Gaseous material and microwave power are introduced to the plasma formation chamber to generate plasma by a microwave discharge through electron cyclotron resonance. The plasma is extracted to the specimen chamber from the plasma extracting orifice. In the specimen chamber, the plasma is accelerated by the effect of divergent magnetic field to irradiate the surface of the specimen so as to deposit a thin film on the specimen substrate. A high-quality thin film is formed with a high efficiency at a low temperature. Accordingly, a thin film can be deposited on a specimen substrate having a low heat resistivity. The plasma deposition apparatus is useful for manufacturing various kinds of electronic devices.

REFERENCES:
patent: 3330752 (1967-07-01), Hallen et al.
patent: 3916034 (1975-10-01), Tsuchimoto
patent: 3937917 (1976-02-01), Consoli
patent: 4065369 (1977-12-01), Ogawa et al.
patent: 4123316 (1978-10-01), Tsuchimoto
patent: 4274426 (1981-06-01), Garrett
Cohen, "Thin Si Films Can Form at Room Temperature", Electronics, Nov. 3, 1981, pp. 82 and 84.
Rosler et al. "A Production (etc) "Solid State Technology Jun. 1976 pp. 45-50.
Sinha et al. "Reactive Plasma (etc)" J. Electrochem. Soc. Solid-State Science and Technology Apr. 1978 pp. 601-608.
Tsuchimoto "Plasma Stream Transport Method (1) etc." J. Vac. Sci. Techol. 15(1), Jan./Feb. 1978 pp. 70-73.
Tsuchimoto "Plasma (etc) (2) (etc)" J. Vac. Sci. Technol. 15(5) Sep./Oct. 1978 pp. 1730-1733.
Tsuchimoto "Operation Modes (etc)" J. Vac. Sci. Technol. 17(6) Nov./Dec. 1980 pp. 1336-1340.

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