Plasma-deposited capacitor dielectrics

Details Plasma-deposited capacitor dielectrics Plasma-deposited capacitor dielectrics

1985-03-19

1986-07-08

Griffin, Donald A.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

252 623Q, 428447, H01G 408, H01L 2912, B32B 904

Patent

active

045996784

ABSTRACT:
A plasma-deposited silicon compound thin film dielectric for use in a thin film capacitor. The film is produced in a high frequency glow discharge with a substrate heated to a temperature in excess of 50.degree. C. A thin film capacitor using such a film has a lower dissipation factor and a reduced tendency to age.

REFERENCES:
patent: 3333169 (1967-07-01), Valley
patent: 3619259 (1971-11-01), Wright et al.
patent: 3806775 (1974-04-01), Edman
patent: 3814983 (1974-06-01), Weissfloch et al.
patent: 4072976 (1978-02-01), Harari
patent: 4156887 (1979-05-01), Tanguy
patent: 4431701 (1984-02-01), Hamada et al.
patent: 4543294 (1985-09-01), Sakagami et al.

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