Plasma density controller for semiconductor device processing eq

Details Plasma density controller for semiconductor device processing eq Plasma density controller for semiconductor device processing eq

1990-08-23

1992-01-21

Bueker, Richard

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

156643, 156626, 118723, 427 39, 437250, H01L 2100

Patent

active

050825178

ABSTRACT:
A semiconductor fabrication plasma property controller (100) for controlling physical properties of a fabrication process plasma medium (144) under the influence of electromagnetic gas discharge energy from a power source (38) comprises a control volume (130) disposed between the process plasma (144) and the electromagnetic gas discharge energy source (38). A control gas (128) flowing within the control volume prohibits a predetermined portion of the emitted electromagnetic energy from influencing the fabrication process plasma (144). The flow rate and/or pressure of the control gas (128) within control volume 130 is used to adjust the fraction of electromagnetic energy absorbed within process plasma (144) and to prohibit influence of a controlled fraction of the plasma-generating electromagnetic energy on the process gas, plasma stream (144). The control volume (130) absorbs the excess electromagnetic energy emitted by the power source (38).

REFERENCES:
patent: 3958883 (1976-05-01), Turner
patent: 4609426 (1986-09-01), Ogawa et al.
patent: 4624214 (1986-10-01), Suzuki et al.
patent: 4794230 (1988-12-01), Seliskar et al.
patent: 4846928 (1989-07-01), Dolins et al.

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