Plasma CVD system comprising plural upper electrodes

Details Plasma CVD system comprising plural upper electrodes Plasma CVD system comprising plural upper electrodes

1992-06-17

1994-03-22

Hearn, Brian E.

Coating apparatus

Gas or vapor deposition

With treating means

118730, C23C 1650

Patent

active

052960374

ABSTRACT:
A diode parallel-plate plasma CVD system has semiconductor wafers are mounted with each of the front surfaces thereof being downwardly directed. The plasma CVD system includes an insulating wafer holder and conductive upper electrodes each being adapted to cover back surface of the semiconductor wafer, thereby forming a film to reduce internal stress and improve energy efficiency.

REFERENCES:
patent: 4376692 (1983-03-01), Tsukada et al.
patent: 4400235 (1983-08-01), Coquin et al.
patent: 5110438 (1992-05-01), Ohmi et al.

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