Plasma CVD of aluminum films

Details Plasma CVD of aluminum films Plasma CVD of aluminum films

1990-09-19

1992-02-25

Lusignan, Michael

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 38, 427124, 427123, 4271261, 4272551, 4272552, 427314, 427250, B05D 306, B05D 512

Patent

active

050912100

ABSTRACT:
A deposited film formation method which forms an aluminum film by use of the plasma CVD method,

REFERENCES:
patent: 3338209 (1967-08-01), Bhola
patent: 4716050 (1987-12-01), Green et al.
R. A. Levy et al., "Characterization of LPCVD Aluminum for VLSI Processing", Journal of the Electrochemical Society, vol. 131, No. 9, pp. 2175-2182, Sep. 1984.
R. Bhat et al., "The Growth and Characterization of AlGaAs Using Dimethyl Aluminum Hydride", Journal of Crystal Growth, vol. 77, pp. 7-10 (1986).
M. Hanabusa et al., "Photochemical Vapor Deposition of Aluminum Thin Films Using Dimethylaluminum Hydride", Japanese Journal of Applied Physics, vol. 27, No. 8, pp. L1392-L1394, Aug. 1988.
A. Sekiguchi et al., "Gas-Temperature-Controlled (GTC) CVD of Aluminum and Aluminum-Silicon Alloy Film for VLSI Processing", Japanese Journal of Applied Physics, vol. 27, No. 11, pp. L2134-L2136, Nov. 1988.
K. Masu et al., "Aluminum Deposition From Weekly-Excited Metalorganic Source by Hybrid-Excitation CVD", Extended Abstracts of the 20th (1988 International) Conference on Solid State Devices and Materials, pp. 573-576, Tokyo 1988.
D. R. Biswas et al., "Vapor Phase Deposition of Aluminum Film on Quartz Substrate", Journal of the Electrochemical Society, vol. 130, No. 1, pp. 234-236, Jan. 1983.
T. Kato et al., "Chemical Vapor Deposition of Aluminum Enhanced by Magnetron-Plasma", Journal of the Electrochemical Society, vol. 135, No. 2, pp. 455-459, Feb. 1988.

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