Plasma-CVD method and apparatus

Coating processes – Direct application of electrical – magnetic – wave – or... – Pretreatment of substrate or post-treatment of coated substrate

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118 50, 118600, 118715, 4271263, 4271264, 427249, 427255, 4272553, 427294, 427296, 427307, 427309, 427322, 427535, 427536, 427537, 427539, 427553, 427561, 427568, 427576, 427577, 427579, 427595, C23C 1402

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055629520

ABSTRACT:
In a plasma-CVD method and apparatus, plasma is formed from a film material gas in a process chamber and, in the plasma, a film is deposited on a substrate disposed in the process chamber. Formation of the plasma from the material gas is performed by application of an rf-power prepared by effecting an amplitude modulation on a basic rf-power having a frequency in a range from 10 MHz to 200 MHz. A modulation frequency of the amplitude modulation is in a range from 1/1000 to 1/10 of the frequency of the basic rf-power. Alternatively, the rf-power is prepared by effecting on the basic rf-power a first amplitude modulation at a frequency in a range from 1/1000 to 1/10 of the frequency of the basic rf-power, and additionally effecting a second amplitude modulation on the modulated rf-power. A modulation frequency of the second amplitude modulation is in a range from 1/100 to 100 times the modulation frequency of the first amplitude modulation.

REFERENCES:
Patent Abstracts Of Japan, vol. 017, No. 554 (C-118) 6 Oct. 1993 & JP-A-05 156 451 (Nissin Electric Co Ltd) 22 Jun. 1993 (Abstract).
Patent Abstracts Of japan, vol. 017, No. 361 (C-1080) 8 Jul. 1993 & JP-A-05 051 753 (Nissin Electric Co Ltd) 2 Mar. 1993 (Abstract).
36th National Symposium Of The American Vacuum Society, Boston, MA, USA, 23-27 Oct. 1989, ISSN 0734-2101, Journal Of Vacuum Science & Technology A A (Vacuum, Surfaces, And Films), May-Jun. 1990, USA pp. 1851-1856 Verdeyen J. T. et al "Modulated Discharges: Effect on Plasma Parameters and deposition".
"Application of Modulated RF Discharge to a-Si:H Deposition," Proceedings of Japanese Symposium on Plasma Chemistry, vol. 1, 1988, M. Shiratani et al. (No month available).
"Effects of Low-frequency Modulation on RF Discharge Chemical Vapor Deposition," Appl. Phys. Lett. 53 (14), Oct. 3, 1988, Y. Watanabe et al.
"Reaction Control in Processing Plasmas by Square-Wave-Amplitude-Modulating RF Voltage," Technology Reports of Kyushu University, vol. 62, No. 6, Dec. 1989, Masaharu Shiratani et al.

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