Plasma CVD device

Details Plasma CVD device Plasma CVD device

1996-01-23

1999-01-19

Dang, Thi

Coating apparatus

Gas or vapor deposition

With treating means

H05H 100, C23C 1600

Patent

active

058610634

ABSTRACT:
A second electrode 20 having a container-like configuration defines a reaction space 29. A mounting portion 12 of a first electrode 10 and a workpiece W loaded on the mounting portion 12 are surrounded by the second electrode 20. A pair of auxiliary walls 27 project upwardly from a bottom wall 21 of the second electrode 20. The mounting portion 12 for the first electrode 10 is disposed in an arrangement area A defined by the auxiliary walls 27. The mounting portion 12 projects from upper end edges of the auxiliary walls 27.

REFERENCES:
patent: 5534070 (1996-07-01), Okamura et al.
patent: 5542559 (1996-08-01), Kawakami et al.

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