Plasma CVD apparatus including rotating magnetic field generatio

Details Plasma CVD apparatus including rotating magnetic field generatio Plasma CVD apparatus including rotating magnetic field generatio

1993-09-28

1995-06-13

Breneman, R. Bruce

Coating apparatus

Gas or vapor deposition

With treating means

118723R, 118715, C23C 1650

Patent

active

054239150

ABSTRACT:
This invention provides a plasma CVD method aimed at forming an amorphous silicon thin film on a large-area substrate at a high speed and also an apparatus therefor. The method and apparatus are characterized by a reaction vessel, means for feeding a reactant gas to the reaction vessel and discharging the same, discharging electrodes accommodated in the reaction vessel, a source for supplying power for glow discharge to the discharging electrodes, two pairs of solenoid coils arranged on opposite sides of said reaction vessel and so disposed that the axes thereof perpendicularly intersect each other as well as perpendicularly the electric field formed between the discharging electrodes, and an AC source for supplying power to said solenoid coils for magnetic field generation, whereby an amorphous silicon thin film is formed on a substrate held to intersect perpendicularly the electric field between the discharging electrodes.

REFERENCES:
patent: 4740268 (1988-04-01), Bukham
patent: 4829215 (1989-05-01), Kim et al.
patent: 4842683 (1989-06-01), Cheng et al.
patent: 4901669 (1990-02-01), Yamamoto et al.
patent: 5089442 (1992-02-01), Olmer
Proc. of the Int'l Seminar on Reactive Plasmas, 1991, "Status of the GEC RF Reference Cell/Laser Diagnostics etc." Hargis, Jr., et al.
Proc. of the Int'l Seminar on Reactive Plasmas, 1991, "The Helicon Diffusion Reactor" Boswell et al.
Proc. of the Int'l Seminar on Reactive Plasmas, 1991 "A Plasma Source for Processing Using Linear Multipole Field" Fukao et al.
Proc. of the Int'l Seminar on Reactive Plasmas, 1991, "Large Diameter Plasma Sourse" Hagane et al.
Proc. of the Int'l Seminar on Reactive Plasmas, 1991, "Trial Preparation of Uniform Titanium Nitride Thin Films by etc." Kuwahara et al.

Affiliated with

Also associated with

Rating

Plasma CVD apparatus including rotating magnetic field generatio does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma CVD apparatus including rotating magnetic field generatio, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma CVD apparatus including rotating magnetic field generatio will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1306752