Plasma CVD apparatus and dry cleaning method of the same

Coating processes – Direct application of electrical – magnetic – wave – or... – Pretreatment of substrate or post-treatment of coated substrate

Reexamination Certificate

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C427S569000, C427S535000, C427S578000, C427S579000, C134S001100, C134S022100, C438S905000, C216S071000

Reexamination Certificate

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07569256

ABSTRACT:
In a parallel flat plate type plasma CVD apparatus, plasma damage of constituent parts in a reaction chamber due to irregularity of dry cleaning in the reaction chamber is reduced and the cost is lowered. In the parallel flat plate type plasma CVD apparatus in which high frequency voltages of pulse waves having mutually inverted waveforms are applied to an upper electrode and a lower electrode, and the inversion interval of the pulse wave can be arbitrarily changed, the interior of the reaction chamber is dry cleaned.

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