Plasma CVD apparatus

Details Plasma CVD apparatus Plasma CVD apparatus

1993-06-10

1995-04-11

Bueker, Richard

Coating apparatus

Gas or vapor deposition

With treating means

C23C 1650

Patent

active

054054478

ABSTRACT:
A plasma CVD apparatus whose discharge electrode is a single line member bent in a U shape in an alternating manner and in which a substrate to be processed is held substantially in parallel to the discharge electrode. The electric field around the electrode becomes stronger and the intensity distribution of this field becomes even. As a result, a product film formed on the substrate surface has a uniform thickness, and the film can be formed at high speeds.

REFERENCES:
patent: 4526673 (1985-07-01), Little et al.
patent: 4960072 (1990-10-01), Ohta
patent: 5039376 (1991-08-01), Zukotynski
Bunshah, Deposition Technologies for Films and Coatings, Noyes Publications, Park Ridge, N.J., USA, pp. 258-259.

Affiliated with

Also associated with

Rating

Plasma CVD apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma CVD apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma CVD apparatus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1535876