Plasma CVD apparatus

Details Plasma CVD apparatus Plasma CVD apparatus

2002-07-24

2008-01-01

Alejandro-Mulero, Luz (Department: 1763)

Coating apparatus

With indicating, testing, inspecting, or measuring means

C118S715000, C204S298020, C204S298030, C204S298070

Reexamination Certificate

active

07314525

ABSTRACT:
A plasma CVD apparatus comprises a reaction container for allowing a reaction for forming a thin film on a semiconductor wafer to be performed, a bias electrode which applies a high frequency bias for sputtering to the semiconductor wafer, a nozzle which supplies SiH4gas including at least hydrogen into the reaction container, and a control circuit which on/off-controls the high frequency bias through a switch and which on/off-controls the supply of SiH4gas through a flow rate controller based on an opposite control logic to a high frequency bias control logic.

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