Plasma confinement in a low pressure electrically grounded R.F.

Details Plasma confinement in a low pressure electrically grounded R.F. Plasma confinement in a low pressure electrically grounded R.F.

1985-12-18

1987-08-11

Morgenstern, Norman

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

118 501, 118723, 427255, 427264, B05D 302

Patent

active

046861130

ABSTRACT:
A deposition reactor system is described for producing a coating containing a predetermined component on a substrate from a plasma containing such component in an ionized state. The substrate is supported on a susceptor within a reactor chamber to which is introduced a gas containing the predetermined component. A radio frequency field is inductively coupled to the gas, forming a plasma in the reactor chamber in the region of the susceptor. The susceptor is maintained at ground potential in the radio frequency field.

REFERENCES:
patent: 3980854 (1976-09-01), Berkman et al.
patent: 4298629 (1981-11-01), Nozaki et al.

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