Plasma chemical vapor reaction method employing cyclotron resona

Details Plasma chemical vapor reaction method employing cyclotron resona Plasma chemical vapor reaction method employing cyclotron resona

1989-01-19

1991-08-13

Lusignan, Michael

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 37, 427 47, C23C 1626, C23C 1650

Patent

active

050395483

ABSTRACT:
An improved plasma chemical vapor reaction apparatus is described. The apparatus comprises a reaction chamber, a gas feeding system for introducing a reactive gas into the reaction chamber, Helmholtz coils for inducing a magnetic field in the reaction chamber, a microwave generator for inputting microwaves into the reaction chamber, a substrate holder for supporting a substrate to be treated in the reaction chamber. The substrate holder is located with respect to said magnetic field inducing means in order that the graduent vector of the strength of the magnetic field induced by the Helmoholts coils is directed toward the substrate in the vicinity of the surface of the substrate to be treated. By virtue of the magnetic field caracterized by such a gradient vector, the plasma gas in the reaction chamber is drifted toward the substrate.

REFERENCES:
patent: 4125431 (1978-11-01), Fowler
patent: 4582720 (1986-04-01), Yamazaki
patent: 4724058 (1988-02-01), Morrison, Jr.
patent: 4745337 (1988-05-01), Pichot et al.
patent: 4926791 (1990-05-01), Hicose et al.
Kauarada et al, Japanese Journal of Applied Physics, vol. 26, No. 6, Jun. 1987, pp. L1032-L1034.

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