Plasma-chemical vapor-phase epitaxy system comprising a planar a

Details Plasma-chemical vapor-phase epitaxy system comprising a planar a Plasma-chemical vapor-phase epitaxy system comprising a planar a

1992-06-03

1993-11-16

Thomas, Tom

Coating apparatus

Gas or vapor deposition

With treating means

118725, C23C 1650

Patent

active

052619621

ABSTRACT:
A plasma-chemical vapor-phase epitaxy system or a chemical vapor deposition (CVD) system can produce a large thin film of good quality. The CVD system includes a vacuum container having a quartz glass window, a substrate disposed within the vacuum container as opposed to the window, an antenna type discharge electrode disposed outside of the vacuum container as opposed to the window, and a high-frequency power supply for feeding electric power to the same electrode. In this way, by disposing an electrode outside of a container and exciting the reaction gas with high-frequency electromagnetic waves, a large thin film of good quality can be formed.

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Webster's II New Riverside University Dictionary, 1988, p. 970.

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