Plasma chemical vapor deposition apparatus

Details Plasma chemical vapor deposition apparatus Plasma chemical vapor deposition apparatus

2005-05-03

2005-05-03

Hassanzadel, P. (Department: 1763)

Coating apparatus

Gas or vapor deposition

With treating means

Reexamination Certificate

active

06886491

ABSTRACT:
The present invention relates to chemical vapor deposition apparatus. In the chemical vapor deposition apparatus, an RF power source connection portionconnected to an external RF power source is installed on an upper side of a chamber; an RF electrode plate is installed within the chamber to be spaced with a predetermined gap from an inner upper surface of the chamber and to be spaced with a predetermined gap from a showerhead disposed below the RF electrode plate; plasma is generated in a first buffer portion, which is defined by a gap between the RF electrode plate and an upper surface of the showerhead, by means of the electric power applied from the external RF power source to the RF electrode plate; the showerhead is divided into two sections in a vertical direction and a second buffer portion is defined by a space between the two sections; reactant gases are supplied to the first buffer portion in which the plasma is generated; and source gases are supplied to the second buffer portion.

REFERENCES:
patent: 4971653 (1990-11-01), Powell et al.
patent: 5015331 (1991-05-01), Powell
patent: 5102523 (1992-04-01), Beisswenger et al.
patent: 5304250 (1994-04-01), Sameshima et al.
patent: 5385624 (1995-01-01), Amemiya et al.
patent: 5433787 (1995-07-01), Suzuki et al.
patent: 5882414 (1999-03-01), Fong et al.
patent: 5997649 (1999-12-01), Hillman
patent: 6013580 (2000-01-01), Yanagida
patent: 6245396 (2001-06-01), Nogami
patent: 6435428 (2002-08-01), Kim et al.
patent: 11168094 (1999-06-01), None

Affiliated with

Also associated with

Rating

Plasma chemical vapor deposition apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma chemical vapor deposition apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma chemical vapor deposition apparatus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3410834