Plasma-based EUV light source

Radiant energy – Radiant energy generation and sources – With radiation modifying member

Reexamination Certificate

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C250S505100, C250S493100, C378S119000, C378S121000, C378S122000, C378S145000, C378S034000, C378S084000, C315S111310, C315S111410, C315S111810, C315S111910, C219S121310, C219S121410, C219S121480, C313S231310, C313S231410

Reexamination Certificate

active

11252021

ABSTRACT:
Various mechanisms are provided relating to plasma-based light source that may be used for lithography as well as other applications. For example, a device is disclosed for producing extreme ultraviolet (EUV) light based on a sheared plasma flow. The device can produce a plasma pinch that can last several orders of magnitude longer than what is typically sustained in a Z-pinch, thus enabling the device to provide more power output than what has been hitherto predicted in theory or attained in practice. Such power output may be used in a lithography system for manufacturing integrated circuits, enabling the use of EUV wavelengths on the order of about 13.5 nm. Lastly, the process of manufacturing such a plasma pinch is discussed, where the process includes providing a sheared flow of plasma in order to stabilize it for long periods of time.

REFERENCES:
patent: 6566667 (2003-05-01), Partlo et al.
patent: 6804327 (2004-10-01), Schriever et al.
patent: 6894298 (2005-05-01), Ahmad et al.
Arber, T. D. et al., “The effect of sheared axial flow on the linear stability of the Z-pinch,”Phys. Plasmas, Feb. 1996, 3(2), 554-560.
Banine, V. et al., “EUV lithography: Main challenges,”Micro- and Nanoelectronics, 2004, 5401, 1-7.
Borisov, V. M. et al., “EUV sources using Xe and Sn discharge plasmas,”J. Phys. D: Appl. Phys., 2004, 37, 3254-3265.
Brown, K. H., “In the End It's the Bottom Lin That Counts,”Proceedings of SPIE, 2004, 5374, 9-15.
Chapman, B. E. et al., “Strong E x B Flow Shear and Reduced Fluctuations in a Reversed-Field Pinch,”Physical Review Letters, Mar. 9, 1998, 80(10), 2137-2140.
Chu, M. S. et al., “Effect of toroidal plasma flow and flow shear on global magnetohydrodynamic MHD modes,”Phys. Plasmas, Jun. 1995, 2(6), 2236-2241.
Fomenkov, I. V. et al., “EUV discharge light source based on a dense plasma focus operated with positive and negative polarity,”J. Phys. D: Appl Phys., 2004, 37, 3266-3276.
Golingo, R. P. et al., “Formation of a sheared flow Z pinch,”Physics of Plasmas, 2005, 12, 062505-1-9.
Golingo, R. P. et al., “Spatial deconvolution technique to obtain velocity profiles from chord integrated spectra,”Review Of Scientific Instruments, Apr. 2003, 74(4), 2332-2337.
Greenwood, J. R. et al., “Xenon re-circulation systems for next generation lithography tools,”Proceedings of SPIE, 2004, 5374, 991-997.
Kieft, E. R. et al., “Characterization of a vacuum-arc discharge in tin vapor using time-resolved plasma imaging and extreme ultraviolet spectrometry,”Physical Review E, 2005, 71, 026409-1-7.
Kieft, E. R. et al., “Comparison of experimental and simulated extreme ultraviolet spectra of xenon and tin discharges,”Physical Review E, 2005, 71, 036402-1-12.
McGeoch, M., “Pinch plasma EUV source with particle injection,”J. Phys. D: Appl. Phys., 2004, 37, 3277-3284.
Meiling, H. et al, “Progress in the ASML EUV program,”Proceedings of SPIE, 2004, 5374, 31-42.
Miller, R. L. et al., “Stabilization of ballooning modes with sheared toroidal rotation,”Phys. Plasmas, Oct. 1995, 2(10), 3676-3684.
Nastoyashchii, A. F., “Optimal physical conditions for extreme UV generation,”Proceedings of SPIE, 2004, 5448, 749-755.
Pankert, J. et al., “Physical Properties of the HCT EUV Source,”Proceedings of SPIE, 2003, 5037, 112-118.
Sasaki, A. et al., “Simulation of the EUV Spectrum of XE and Sn Plasmas,”IEEE Journal of Selected Topics in Quantum Electronics, Nov./Dec. 2004, 10(6), 1307-1314.
Shumlak, U. et al., “Evidence of Stabilization in the Z-Pinch,”Physical Review Letters, Nov. 12, 2001, 87(20), 205005-1-4.
Shumlak, U. et al., “Sheared Flow Stabilization of the m=1 Kink Mode in Z Pinches,”Physical Review Letters, Oct. 30, 1995, 75(18), 3285-3288.
Shumlak, U. et al., “Sheared flow stabilization experiments in the ZaP flow Z pinch,”Physics of Plasmas, May 2003, 10(5), 1683-1690.
Silverman, P. J., “Extreme ultraviolet lithography: overview and development status,”J. Microlith, Microfab, Microsyst., Jan.-Mar. 2005, 4(1), 011006-1-5.
Stamm, U., “Extreme ultraviolet light sources for use in semiconductor lithography—state of the art and future development,”J. Phys. D: Appl. Phys., 2004, 37, 3244-3253.
Stamm, U. et al., “High Power EUV Lithography Sources Based on Gas Discharges and Laser Produced Plasmas,”Proceedings of SPIE, 2003, 5037, 119-129.
Teramoto, Y. et al., “Development of Xe-filled capillary discharge extreme ultraviolet radiation source for semiconductor lithography,”Proceedings of SPIE, 2003, 5037, 767-775.
Teramoto, Y. et al., “High repetition rate MPC generator-driven capillary Z-pinch EUV source,”Proceedings of SPIE, 2004, 5374, 935-942.

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