Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2007-04-03
2007-04-03
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S692000, C438S693000, C438S508000
Reexamination Certificate
active
10837528
ABSTRACT:
The present invention is related to methods of processing a semiconductor device. A plasma vapor deposition process is used to fill a trench with an oxide layer, wherein sharp corners are formed by the oxide layer. A pre-planarization sputtering process is performed to reduce the oxide layer corner sharpness. A planarization process is performed using polishing.
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Chen Chun-Fu
Hung Yung-Tai
Liao Chen-Wei
Lin Chin-Hsiang
Yang Yun-Chi
Knobbe Martens Olson & Bear LLP
Le Dung A.
Macronix International Co. Ltd.
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