Plasma assisted oxidation of perovskites for forming high temper

Details Plasma assisted oxidation of perovskites for forming high temper Plasma assisted oxidation of perovskites for forming high temper

1991-02-05

1992-04-21

Beck, Shrive

Superconductor technology: apparatus, material, process

High temperature , per se

Having tc greater than or equal to 150 k

505742, 427 38, 427 39, 427 62, H01L 3912, B05D 512, C23C 1656

Patent

active

051068273

ABSTRACT:
A process is described for the formation of high temperature superconducting materials from perovskites by inductively coupled plasma assisted oxidation. An inductively coupled plasma reactor is used to oxidize oxygen deficient perovskites in less time and at lower temperatures than previously possible. High power densities are created within the plasma reactor. This is thought to contribute to the rapid and low temperature phase change during oxidation from tetragonal to orthorhombic crystal structure apparently required for superconductivity at temperatures greater than approximately 77.degree. K. The low temperature and rapid processing time permits the application of conventional lithographic semiconductor manufacturing techniques to be applied to the potentially high temperature superconducting perovskite materials.

REFERENCES:
patent: 4431898 (1984-02-01), Reinberg et al.
patent: 4929598 (1990-05-01), Bagley et al.

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