Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1991-02-05
1992-04-21
Beck, Shrive
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
505742, 427 38, 427 39, 427 62, H01L 3912, B05D 512, C23C 1656
Patent
active
051068273
ABSTRACT:
A process is described for the formation of high temperature superconducting materials from perovskites by inductively coupled plasma assisted oxidation. An inductively coupled plasma reactor is used to oxidize oxygen deficient perovskites in less time and at lower temperatures than previously possible. High power densities are created within the plasma reactor. This is thought to contribute to the rapid and low temperature phase change during oxidation from tetragonal to orthorhombic crystal structure apparently required for superconductivity at temperatures greater than approximately 77.degree. K. The low temperature and rapid processing time permits the application of conventional lithographic semiconductor manufacturing techniques to be applied to the potentially high temperature superconducting perovskite materials.
REFERENCES:
patent: 4431898 (1984-02-01), Reinberg et al.
patent: 4929598 (1990-05-01), Bagley et al.
Borden Michael
Daniell Keith
Magida Matthew
Zarowin Charles
Beck Shrive
Burke Margaret
Grimes Edwin T.
Murphy Thomas P.
The Perkin Elmer Corporation
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