Plasma-assisted microwave processing of materials

Details Plasma-assisted microwave processing of materials Plasma-assisted microwave processing of materials

1996-01-05

1998-12-08

Paschall, Mark H.

Electric heating

Metal heating

By arc

21912143, 21912138, 219678, B23K 1000

Patent

active

058473556

ABSTRACT:
A microwave plasma assisted method and system for heating and joining materials. The invention uses a microwave induced plasma to controllably preheat workpiece materials that are poorly microwave absorbing. The plasma preheats the workpiece to a temperature that improves the materials' ability to absorb microwave energy. The plasma is extinguished and microwave energy is able to volumetrically heat the workpiece. Localized heating of good microwave absorbing materials is done by shielding certain parts of the workpiece and igniting the plasma in the areas not shielded. Microwave induced plasma is also used to induce self-propagating high temperature synthesis (SHS) process for the joining of materials. Preferably, a microwave induced plasma preheats the material and then microwave energy ignites the center of the material, thereby causing a high temperature spherical wave front from the center outward.

REFERENCES:
patent: 4061991 (1977-12-01), Hamid et al.
patent: 4822966 (1989-04-01), Matsubara
patent: 4838915 (1989-06-01), Hassler
patent: 4900894 (1990-02-01), Tanaka et al.
patent: 4963709 (1990-10-01), Kimrey, Jr.
patent: 5118917 (1992-06-01), Van Krieken et al.
patent: 5648007 (1997-07-01), Reslinger et al.
patent: 5653775 (1997-08-01), Plovnick et al.

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