Plasma-assisted method for thin film fabrication

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

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427 39, B05D 306

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047987391

ABSTRACT:
A device has a low-pressure tank placed inside an airtight chamber for plasma-depositing onto at least two substrata spaced apart in a substantial parallel relationship in the tank thin films. To effect the decomposition of the gas reagent inside the tank, at least one perforated polarized plasma generating electrode is interposed between the substrate. The airtight chamber has a pressure lower than that of the tank.

REFERENCES:
patent: 4123989 (1978-11-01), Jewett
patent: 4226208 (1980-10-01), Nishida et al.
patent: 4317844 (1982-03-01), Carlson
patent: 4328258 (1982-05-01), Coleman
patent: 4395323 (1983-07-01), Denton et al.
patent: 4428810 (1984-01-01), Webb et al.
patent: 4461783 (1984-07-01), Yamazaki
patent: 4500563 (1985-02-01), Ellenberger et al.
patent: 4543267 (1985-09-01), Yamazaki
patent: 4545327 (1985-10-01), Campbell et al.
Patent Abstracts of Japan, vol. 8, No. 30 (C-209), [1467], Feb. 8, 1984, JP A 58 193 362.
Patent Abstracts of Japan, vol. 8, No. 95 (E-242), [1532], May 2, 1984, JP A 59 14 633.
Patent Abstracts of Japan, vol. 8, No. 122 (C-227), [1559], Jun. 8, 1984, JP A 59 35 674.
Patent Abstracts of Japan, vol. 9, No. 52 (C-269), [1775], Mar. 6, 1985, JP A 59 193 265.
Patent Abstracts of Japan, vol. 7, No. 166 (E-138), [1311], Jul. 21, 1983, JP A 58 73 111.

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