Plasma-assisted dry etching of noble metal-based materials

Details Plasma-assisted dry etching of noble metal-based materials Plasma-assisted dry etching of noble metal-based materials

2005-01-25

2005-01-25

Olsen, Allan (Department: 1763)

Etching a substrate: processes

Forming or treating electrical conductor article

C216S065000, C216S066000, C216S067000, C216S075000, C134S001100, C134S002000, C134S021000, C438S694000, C438S708000, C438S710000, C438S720000

Reexamination Certificate

active

06846424

ABSTRACT:
A process for removing and/or dry etching noble metal-based material structures, e.g., iridium for electrode formation for a microelectronic device. Etch species are provided by plasma formation involving energization of one or more halogenated organic and/or inorganic substance, and the etchant medium including such etch species and oxidizing gas is contacted with the noble metal-based material under etching conditions. The plasma formation and the contacting of the plasma with the noble metal-based material can be carried out in a downstream microwave processing system to provide processing suitable for high-rate fabrication of microelectronic devices and precursor structures in which the noble metal forms an electrode, or other conductive element or feature of the product article.

REFERENCES:
patent: 4659426 (1987-04-01), Fuller et al.
patent: 5492855 (1996-02-01), Matsumoto et al.
patent: 5575888 (1996-11-01), Kosakowski et al.
patent: 5814238 (1998-09-01), Ashby et al.
patent: 5854104 (1998-12-01), Onishi et al.
patent: 5911887 (1999-06-01), Smith et al.
patent: 5976928 (1999-11-01), Van Buskirk et al.
patent: 6018065 (2000-01-01), Baum et al.
patent: 20020066532 (2002-06-01), Shih et al.
patent: 56023752 (1981-03-01), None
Derwent Acc. No. 1981-29945D, May 1981.*
Koteki, D.E., “A Review of High Dielectric Materials for DRAM Capacitors”,Integ. Ferro., 1997, vol. 16, pp. 1-19.
Jeon et al., “Thermal Stability of Ir/Polycrystalline-Si Structure for Bottom Electrode of Integrated Ferroelectric Capacitors”,Appl. Physics Lett., vol. 71(4), pp. 467-469.
Williams, et al., “Etch Rates for Micromachining Processing”,Journ. For Microelectromechanical Systems, Dec. 1996, vol. 5 (4), pp. 256-269.
Vugts, et al., “Si/XeF2Etching-Temperature Dependence”, 1996,J. Vac. Sci. Tech. A, vol. 14(5), pp. 2766-2774.
P.C. Fazan, et al., “Stacked Capacitor Modules for 64 Mb DRAMs and Beyond”,Semiconductor Inter., 1992, vol. 108, pp. 108--112.
L. H. Parker, et al., Ferroelectric Materials for 64Mb and 256Mb DRAMs,IEEE Circuits and Devices Mag., Jan. 1990, pp. 17-26.
R. E. Sievers, et al., “Volatile Barium B-Diketonates for Use as MOCVD Precursors”,Coord. Chem. Rev., 1993, pp. 285-291.
C. Farrell, et al., “A Reactive Ion Etch Study for Producing Patterned Platinum Structures”, Presented at ISIF 96, Mar. 18, 19,20, 1996 Tempe AZ. (to be published in Integrated Ferroelectrics).
K. R. Milkove and C. X. Wang, “Insight into the dry cleaning of Fence Patterned Platinum Structures”,J. Vac. Sci. Tech. A, 1997, vol. 15(3), pp. 596-603.
Chang, F.I., et al., “Gas Phase Silicon Micromachining with Xenon Difluoride”,Proc of SPIE, 1995, vol. 2641, pp. 117-128.
Bensaola, A. et al., “Low Temperature Ion Beam Enhanced Etching of Tungsten Films with Xenon Difluoride”,Appl. Phys. Lett., Dec. 1986, vol. 49(24), pp. 1663-1664.
G. Stauf, BaSrTiO3 Etching for Advanced Microelectronic Devices, U.S. Army Missile Command, Report No., DAAH01-96-C-R035, Jan. 10, 1996-Jan. 30, 1998.
Ebsworth, E.A.V., et al., “Formation of Iridium Fluoroacyl Complexes by Reaction of Iridium Carbonyls with Xenon Difluoride and Reactions of these to Generate Unusual Acyl Complexes”,J. Chem. Soc. , Dalton Trans., 1993, ISS. 7, pp. 1031-1037.
Blake, A.J., et al., “ Novel Reaction of an Iridium Carbonyl Complex with Xenon Difluoride: The First Metal Fluoroacyl Complex”,J. Chem. Soc., Chem. Commun., 1988, ISS.8, pp. 529-530.
Sladkey, F.O., et al., “Xenon Difluoride as a Fluoride Ion Donor”J. Chem. Soc. A, 1969, vol. 14, pp. 2179-2188.
Floy I. Chang, et al., Gas-Phase Silicon Micromachining with Xenon Difluoride, Proc. Of SPIE vol. 2641, pp. 117-128.

Affiliated with

Also associated with

Rating

Plasma-assisted dry etching of noble metal-based materials does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma-assisted dry etching of noble metal-based materials, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma-assisted dry etching of noble metal-based materials will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3418323