Plasma-assisted deposition process for producing a thin layer on

Details Plasma-assisted deposition process for producing a thin layer on Plasma-assisted deposition process for producing a thin layer on

1992-03-10

1994-03-01

King, Roy

Superconductor technology: apparatus, material, process

High temperature , per se

Having tc greater than or equal to 150 k

505731, 505730, 20419224, 20419212, 20429806, 20429807, 20429809, 427 62, C23C 1434, B05D 512

Patent

active

052907589

ABSTRACT:
Coatings such as high Tc superconductor material on substrates which incorporate reactive gases like oxygen and nitrogen are formed by providing the substrate so that it is spaced from the target region in a coating chamber, forming particles of the coating material by plasma from a cathodic target and entraining the particles to the substrate spaced from the plasma in a gas stream including the reactive gas and at a pressure of 0.1 to 20 mbar.

REFERENCES:
patent: 4512867 (1985-04-01), Andreev et al.
patent: 4692230 (1987-09-01), Nihei et al.
patent: 4946576 (1990-08-01), Dietrich et al.
patent: 5110435 (1992-05-01), Haberland
Akutsu et al, "Preparation of high-Tc Y-B.sub.a -C.sub.u -O films by three-target magnetron sputtering", Jpn. J. Appl. Phys. 29(4) Apr. 1990, pp. L604-L606.
Kojima et al, "As-Grown Superconductivity of B.sub.i S.sub.r C.sub.a C.sub.u O thin films prepared by magnetron sputtering with three targets: Bi.sub.2+a (SrCa).sub.2 Cu.sub.3 Ox, Bi.sub.2 (SrCa).sub.2+b Cu.sub.3 Ox and Bi.sub.2 (SrCa).sub.2 Cu.sub.3+c Ox (a=b=1, C=1.5)", Jpn. J. Appl. Phys. 28(4) Apr. 1989 pp. L643-L645.

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