Plasma ashing enhancement

Details Plasma ashing enhancement Plasma ashing enhancement

1996-06-26

1998-09-29

Alexander, Lyle A.

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

134 11, 134 2, 134 3, C25F 100

Patent

active

058141553

ABSTRACT:
A method for enhancing sidewall polymer removal. In one embodiment of the present invention, O.sub.2 is introduced into an ashing environment at a flow rate of approximately 800 standard cubic centimeters per minute (SCCM). In the present embodiment, CF.sub.4 is also introduced into the ashing environment. The CF.sub.4 is introduced at a flow rate of approximately 80 SCCM. The ashing environment also has H.sub.2 O vapor introduced therein. In the present embodiment, the H.sub.2 O vapor is introduced into the ashing environment at a flow rate of approximately 80 SCCM. The ashing environment is used to selectively etch sidewall polymer material, thereby providing a method for removing sidewall polymer material without detrimentally etching other materials.

REFERENCES:
patent: 4786352 (1988-11-01), Benzing
patent: 4853081 (1989-08-01), Mlynko
patent: 5198634 (1993-03-01), Mattson et al.
patent: 5647953 (1997-07-01), Williams et al.

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