Plasma ashing apparatus

Details Plasma ashing apparatus Plasma ashing apparatus

1991-09-11

1993-07-13

Reynolds, Bruce A.

Industrial electric heating furnaces

Plasma furnace device

373 2, 373 3, 373 27, 373118, 373124, 373110, 156345, 156643, 20429837, 118728, 427569, H05B 700

Patent

active

052280527

ABSTRACT:
A plasma ashing apparatus has a vacuum treatment chamber for receiving therein a substrate coated with a resist film, a reactive gas introduction pipe equipped with a plasma applicator, a vacuum exhaust pipe, a heating means for heating the substrate, and two pieces of electrodes disposed in parallel to each other. One of the electrodes is a substrate electrode and the other thereof is a circular counter electrode. These two electrodes are commonly connected to an RF power source to thereby constitute a cathode electrode. Multiple concentric perforations are formed in the counter electrode except for a rib portion. A central perforation is formed in the center of the counter electrode. The concentric perforations are formed at every distance, from the center, equivalent to a diameter of the central perforation, while leaving circular electrode surfaces corresponding in width to a radius of of the perforation.

REFERENCES:
patent: 4292384 (1981-09-01), Straughan et al.
patent: 4533820 (1985-08-01), Shimizu
patent: 4961812 (1990-10-01), Baerg et al.
patent: 4983254 (1991-01-01), Fujimura et al.
patent: 4985109 (1991-01-01), Otsubo et al.
patent: 5034086 (1991-07-01), Sato
"High Dose Ion Implantation into Photoresist", Solid-State Science and Technology, Aug. 1978, pp. 1293-1298.
"Carbonized Layer Formation in Ion Implanted Photoresist Masks", Neclear Instrument and Methods in Physics Research, B7/8(1985), pp. 501-506.

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