Plasma arc sintering of silicon carbide

Details Plasma arc sintering of silicon carbide Plasma arc sintering of silicon carbide

1985-04-01

1987-06-30

Lechert, Jr., Stephen J.

Plastic and nonmetallic article shaping or treating: processes

Including step of generating heat by friction

156DIG64, 373 18, 373 19, 419 57, 423345, 432 13, 501 88, F27B 904

Patent

active

046769404

ABSTRACT:
A process for the sintering of silicon carbide refractory or ceramic articles using plasma arc gases. In the process of the invention, a formed silicon carbide article is heated in a plasma fired furnace to a sintering temperature of between 2000.degree. C.-2500.degree. C. at a heating rate of 300.degree. C./hr-2000.degree. C./hr, and held at the sintering temperature for 0.1-2 hours. The enthalpy of the plasma gas is 2000 BTU/lb-4000 BTU/lb, when nitrogen is used as the plasma gas. The total cycle time for the process of the invention, including cooling and loading, is 1.5-20 hours. Silicon carbide articles, produced in accordance with the invention, have high strength, high density, high corrosion resistance and high dimensional stability.

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"Test Furnace Achieves 2200.degree. C. (4000.degree. F.) in Air, Inert Atmospheres", presented by Harper Electric Furnace Corp., Harper Highlights, vol. 5, No. 1, Spring 85.

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