Plasma arc production of silicon nitride

Details Plasma arc production of silicon nitride Plasma arc production of silicon nitride

1974-03-11

1980-06-03

Rutledge, L. Dewayne

Chemistry of inorganic compounds

Silicon or compound thereof

Binary compound

204164, C01B 2106, C01B 3900

Patent

active

042061903

ABSTRACT:
This is a method of producing silicon nitride in a plasma arc furnace utilizing silicon metal or silicon dioxide as a starting material. When silicon metal is used it is reacted directly with a nitrogen bearing gas to produce silicon nitride. When silicon dioxide is used a two-step process is performed wherein the silicon dioxide is first reacted with hydrogen to produce silicon monoxide gas and water and thereafter the silicon monoxide gas is reacted with hydrogen and nitrogen to produce silicon nitride and water.

REFERENCES:
patent: 3658673 (1972-04-01), Kugler
patent: 3704094 (1972-11-01), McClincy
patent: 3733387 (1973-05-01), Kugler
patent: 3892840 (1975-07-01), Abiltrup
Sidgwick, N.Y.; The Chemical Elements and Their Compounds, vol. I, Clarendon Press, Oxford, p. 658.
Berezhnoi, A. S., Silicon and Its Binary Systems Consultants Bureau, New York, 1960, p. 4.

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