Plasma apparatus and method capable of adaptive impedance...

Details Plasma apparatus and method capable of adaptive impedance... Plasma apparatus and method capable of adaptive impedance...

2007-09-04

2007-09-04

Moore, Karla (Department: 1763)

Coating apparatus

Gas or vapor deposition

Work support

C118S7230AN, C156S345280, C156S345510, C279S128000, C361S234000

Reexamination Certificate

active

10659258

ABSTRACT:
A plasma apparatus capable of adaptive impedance matching comprises a plasma reactor which can produce plasma to proceed with CVD (chemical vapor deposition) process, a bi-polar electrostatic chuck which locates inside the plasma reactor and is used to support and secure a wafer, an alternating current bias power supply which connects to the bi-polar electrostatic chuck supplies the voltage potential bias for ion-bombardment from plasma, and an impedance-matching circuit which connects the alternating current bias power supply to the bi-polar electrostatic chuck is used to balance the inner electrode power output and the outer electrode power output of the bi-polar electrostatic chuck.

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