Plasma and plasma UV deposition of SiO.sub.2

Details Plasma and plasma UV deposition of SiO.sub.2 Plasma and plasma UV deposition of SiO.sub.2

1988-12-13

1990-04-10

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437225, 437228, 437235, 427 38, 427 39, 20419212, 20419222, H01L 2100, H01L 2102, H01L 21306, C03C 1500

Patent

active

049160915

ABSTRACT:
A processing apparatus and method utilizing a single process chamber to deposit a layer of doped or undoped silicon dioxide utilizing a silicon source and a dopant gas and a remote plasma from an oxygen source and a source of additional ultraviolet light.

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Lucorsky et al., "Deposition of Silicon Dioxide and Silicon Nitride by Remote Plasma Enhanced Chemical Vapor Deposition", J. Vac. Sci. & Tech., vol. 4, No. 3, May/Jun. 1986, pp. 681-688.
Wolf et al., Silicon Processing for the VLSI Era, Lattice Press, Sunset Beach, CA, 1986, pp. 187-191.
Wolf et al., Silicon Processing for the VLSI Era, vol. 1, Lattice Press, Sunset Beach, 1986, pp. 568-574.

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