Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2006-07-11
2006-07-11
Lee, Wilson (Department: 2821)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C060S202000, C315S111010
Reexamination Certificate
active
07075095
ABSTRACT:
A multistage plasma accelerator system includes at least one intermediate electrode between the plasma chamber between electrodes that include each other. An especially good efficiency can be achieved by way of an uneven distribution of potential to the potential stages formed by the plurality of electrodes having a high potential gradient of the last stage, when the plasma beam emerges, and by a special shape of the magnetic field prevailing in the plasma chamber of the last stage.
REFERENCES:
patent: 5365070 (1994-11-01), Anderson et al.
patent: 5563418 (1996-10-01), Leung
patent: 5847493 (1998-12-01), Yashnov et al.
patent: 6215124 (2001-04-01), King
patent: 6523338 (2003-02-01), Kornfeld et al.
patent: 6525326 (2003-02-01), Harrington et al.
patent: 6600155 (2003-07-01), Andrien et al.
patent: 1222589 (1966-08-01), None
patent: 19828704 (1999-12-01), None
patent: 100 14 033 (2001-10-01), None
patent: 100 14 034 (2001-10-01), None
patent: 054309 (1982-06-01), None
patent: 09223474 (1997-08-01), None
Coustou Gregory
Emsellem Gregory
Kornfeld Günter
Collard & Roe P.C.
Lee Wilson
Thales Electron Devices GmbH
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