Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Reexamination Certificate
2007-10-02
2007-10-02
Vo, Tuyet (Department: 2821)
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
C204S298330, C204S298310, C156S345390, C156S345400, C118S7230VE, C118S7230EB, C315S111710, C315S111610
Reexamination Certificate
active
11435770
ABSTRACT:
A plasma accelerating apparatus and a plasma processing system having the same are provided. The apparatus includes a circular channel comprising an inner wall, an outer wall, and an end wall connected to an end of the inner wall and the outer wall to form an outlet port at the other ends of the inner and outer walls; a gas supply portion to supply a gas to an inside of the channel; and a plasma generating and accelerating portion to supply ionization energy to the gas inside the channel to generate a plasma beam, and to accelerate the generated plasma beam toward the outlet port, wherein one of the inner wall and outer wall of the channel is inclined at an angle so that the other end of the wall is located closer to a center of the plasma accelerating apparatus.
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Letter submitted by Gopalakrishnan Srinivasan Third Party dated Feb. 12, 2007. (Citation of Prior Art).
Park Won-taek
Yoo Jin-woo
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