Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2006-02-28
2006-02-28
Vo, Tuyet (Department: 2821)
Coherent light generators
Particular active media
Semiconductor
C372S045013, C372S046012
Reexamination Certificate
active
07006544
ABSTRACT:
A plane emission type semiconductor laser device includes, on an n-type GaAs stepped substrate, a laminate structure of a lower reflector, a lower clad layer, an active layer, an upper clad layer, an upper reflector, and a p-type contact layer. The stepped substrate includes a circular (100) plane upper level portion, a step portion, and an annular (100) plane lower level portion surrounding the upper level portion with the step portion therebetween. When an AlAs layer is grown as a current confinement layer on the stepped substrate while implanting Si as an n-type impurity into the AlAs layer being grown, the impurity concentration in the AlAs layer on the upper side of the upper level portion is higher than that on the upper side of the step portion, and the oxidation rate of the AlAs layer on the upper side of the upper level portion is lower than that on the upper side of the step portion, so that the progress of oxidation of the AlAs layer on the upper side of the upper level portion is autonomously restrained. By time control of the oxidation reaction of the AlAs layer, it is possible to maintain the circular AlAs layer on the upper side of the upper level portion in an unoxidized state with an accurate shape and an accurate area.
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Kuromizu Yuichi
Narui Hironobu
Tanaka Yoshiyuki
Watanabe Yoshiaki
Yamauchi Yoshinori
Sonnenschein Nath & Rosenthal LLP
Vo Tuyet
Vu Jimmy
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