Dynamic magnetic information storage or retrieval – Head – Hall effect
Patent
1993-07-19
1994-11-08
Levy, Stuart S.
Dynamic magnetic information storage or retrieval
Head
Hall effect
G11B 5127, G11B 533
Patent
active
053632656
ABSTRACT:
A magnetoresistive sensor includes a track width oxide layer which overlies a magnetoresistive element. Etch stop layers lie on opposite sides of the magnetoresistive element adjacent a magnetoresistive element. Contact/boundary control layers overlie the etch stop layer and lie adjacent the track width oxide layer. A separate loft oxide layer overlies the contact/boundary control layers and the track width oxide layer. The magnetoresistive sensor is formed by depositing a track width oxide to a thickness of the contact/boundary control layers.
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Collver Michael M.
Hsie Wei C.
Korzuch William R.
Levy Stuart S.
Seagate Technology Inc.
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