Planarized interlayer insulating film formed of stacked BPSG fil

Details Planarized interlayer insulating film formed of stacked BPSG fil Planarized interlayer insulating film formed of stacked BPSG fil

1995-03-28

1996-05-21

Quach, T. N.

Fishing, trapping, and vermin destroying

437228, 437238, 437978, H01L 21283

Patent

active

055189628

ABSTRACT:
A semiconductor device formed at a substrate surface region is coated with a non-doped CVD silicon oxide film, and an interlayer insulating film composed of a BPSG film, a first ozone-TEOS NSG film and a second ozone-TEOS NSG film is formed on the silicon oxide film. The BPSG film has a thickness of not less than 50 nm but not greater than 200 nm, and is heat-treated at a temperature of not lower than 700.degree. C. but not higher than 800.degree. C. In addition, the first and second zone-TEOS NSG films are also heat-treated at a temperature of not lower than 700.degree. C. but not higher than 800.degree. C.

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N. Shimoyama et al., "Enhanced Hot-Carrier Degradation due to Water in TEOS/O.sub.3 -Oxide and Water Blocking Effect of ECR-SiO.sub.2 ", 1992 Symposium on VLSI Technology Digest of Technical Papers, pp. 94-95.

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